IRFS11N50A

new-10%

Manufacturer part number:IRFS11N50A

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 11A D2PAK

Case Package:SOT-23

Datasheet:IRFS11N50A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	11A
Number of Channels	1
Power Dissipation-Max	170W Tc
Element Configuration	Single
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	1.423nF
Drain to Source Resistance	520mOhm
Rds On Max	520 mΩ
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead