SI3447CDV-T1-GE3

new-10%

Manufacturer part number:SI3447CDV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 7.8A 6-TSOP

Case Package:SOT-23

Datasheet:SI3447CDV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	36MOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Ta 3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 6.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 6V
Current - Continuous Drain (Id) @ 25°C	7.8A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 8V
Rise Time	40ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	6.3A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	7.8A
Height	1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free