IRL640STRL

new-10%

Manufacturer part number:IRL640STRL

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 17A D2PAK

Case Package:SOT-23

Datasheet:IRL640STRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 125W Tc
Element Configuration	Single
Power Dissipation	3.1W
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 5V
Rise Time	83ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±10V
Fall Time (Typ)	52 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	200V
Input Capacitance	1.8nF
Drain to Source Resistance	180mOhm
Rds On Max	180 mΩ
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant