IRLD024PBF

new-10%

Manufacturer part number:IRLD024PBF

Manufacturer:Vishay Siliconix

Description:Transistor: unipolar, N-MOSFET; 60V; 2.5A; 1.3W; DIP4

Case Package:SOT-23

Datasheet:IRLD024PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	100mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	2.5A
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Power Dissipation	1.3W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Rise Time	110ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±10V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	2.5A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	60V
Input Capacitance	870pF
Recovery Time	260 ns
Drain to Source Resistance	100mOhm
Rds On Max	100 mΩ
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free