IRLD110

new-10%

Manufacturer part number:IRLD110

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 1A 4-DIP

Case Package:SOT-23

Datasheet:IRLD110 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.3W Ta
Turn On Delay Time	9.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1A Ta
Gate Charge (Qg) (Max) @ Vgs	6.1nC @ 5V
Rise Time	47ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±10V
Fall Time (Typ)	47 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	100V
Input Capacitance	250pF
Drain to Source Resistance	540mOhm
Rds On Max	540 mΩ
Height	3.37mm
Length	5mm
Width	6.29mm
RoHS Status	Non-RoHS Compliant