Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF7307TRPBF

IRF7307TRPBF

IRF7307TRPBF

Infineon Technologies

IRF7307TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7307TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.2A
Base Part Number IRF7307PBF
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.2A 4.3A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 26ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 33 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 5.2A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.04000 $1.04
500 $1.0296 $514.8
1000 $1.0192 $1019.2
1500 $1.0088 $1513.2
2000 $0.9984 $1996.8
2500 $0.988 $2470
IRF7307TRPBF Product Details

IRF7307TRPBF     Description


  The fifth generation HEXFET of International Rectifier Company uses advanced processing technology to achieve the area with the lowest on-resistance. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient device that can be used in a variety of applications.SO-8 has been modified through a customized framework to enhance thermal characteristics and multi-chip capabilities,making it ideal for a variety of power applications.With these improvements.multiple devices for applications where board space is significantly reduced. The package is designed for gaseous red light or ripple, so it can achieve a power consumption of more than 0.8W in typical printed circuit board placement applications.


IRF7307TRPBF    Features


Generation VTechnology

Ultra Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Available in Tape &Reel

Dynamic dv/dt Rating

Fast Switching

 Lead-Free

 

IRF7307TRPBF     Applications


it provides designers with an extremely efficient device that can be used in a variety of applications.

 



Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News