IRF7307TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
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IRF7307TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
50mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA LOW RESISTANCE
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
5.2A
Base Part Number
IRF7307PBF
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.2A 4.3A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Rise Time
26ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
33 ns
Turn-Off Delay Time
51 ns
Continuous Drain Current (ID)
5.2A
Threshold Voltage
700mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
700 mV
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.04000
$1.04
500
$1.0296
$514.8
1000
$1.0192
$1019.2
1500
$1.0088
$1513.2
2000
$0.9984
$1996.8
2500
$0.988
$2470
IRF7307TRPBF Product Details
IRF7307TRPBF Description
The fifth generation HEXFET of International Rectifier Company uses advanced processing technology to achieve the area with the lowest on-resistance. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient device that can be used in a variety of applications.SO-8 has been modified through a customized framework to enhance thermal characteristics and multi-chipcapabilities,making it ideal for a variety of powerapplications.Withtheseimprovements.multiple devices for applications where board space is significantly reduced. The package is designed for gaseous red light or ripple, so it can achieve a power consumption of more than 0.8W in typical printed circuit board placement applications.
IRF7307TRPBF Features
Generation VTechnology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape &Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7307TRPBF Applications
it provides designers with an extremely efficient device that can be used in a variety of applications.