SI1024X-T1-GE3

new-10%

Manufacturer part number:SI1024X-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI1024X-T1-GE3 - MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6

Case Package:SOT-23

Datasheet:SI1024X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	8.193012mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	700mOhm
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Max Power Dissipation	250mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI1024
Pin Count	6
Number of Elements	2
Number of Channels	1
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	485mA
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Continuous Drain Current (ID)	600mA
Threshold Voltage	450mV
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.485A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.2mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free