APTM50H14FT3G

new-10%

Manufacturer part number:APTM50H14FT3G

Manufacturer:Microsemi Corporation

Description:MOSFET 4N-CH 500V 26A SP3

Case Package:SOT-23

Datasheet:APTM50H14FT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	32
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	208W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Number of Elements	4
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Case Connection	ISOLATED
Turn On Delay Time	10 ns
FET Type	4 N-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	168m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3259pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	500V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	26A
Gate to Source Voltage (Vgs)	30V
DS Breakdown Voltage-Min	500V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Height	11.5mm
Length	73.4mm
Width	40.8mm
Radiation Hardening	No
RoHS Status	RoHS Compliant