SI1046X-T1-GE3

new-10%

Manufacturer part number:SI1046X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 0.606A SC89-3

Case Package:SOT-23

Datasheet:SI1046X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	420mOhm
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PDSO-F3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	420m Ω @ 606mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	66pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	1.49nC @ 5V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	76 ns
Continuous Drain Current (ID)	606mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.606A
Drain to Source Breakdown Voltage	20V
RoHS Status	ROHS3 Compliant