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SI1058X-T1-GE3

SI1058X-T1-GE3

SI1058X-T1-GE3

Vishay Siliconix

MOSFET 20V 1.3A 0.236W 91mohm @ 4.5V

SOT-23

SI1058X-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Supplier Device Package SC-89-6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 236mW Ta
Element Configuration Single
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 91mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 12V
Input Capacitance 380pF
Drain to Source Resistance 91mOhm
Rds On Max 91 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.478116 $0.478116
10 $0.451053 $4.51053
100 $0.425522 $42.5522
500 $0.401435 $200.7175
1000 $0.378713 $378.713

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