PHD38N02LT,118

new-10%

Manufacturer part number:PHD38N02LT,118

Manufacturer:Nexperia USA Inc.

Description:Trans MOSFET N-CH 20V 44.7A 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:PHD38N02LT,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	57.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	57.6W
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 25A, 5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 20V
Current - Continuous Drain (Id) @ 25°C	44.7A Tc
Gate Charge (Qg) (Max) @ Vgs	15.1nC @ 5V
Rise Time	12.5ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±12V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	44.7A
Gate to Source Voltage (Vgs)	12V
Max Dual Supply Voltage	20V
Drain-source On Resistance-Max	0.016Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	179A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant