SI1070X-T1-E3

new-10%

Manufacturer part number:SI1070X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 1.2A SOT563F

Case Package:SOT-23

Datasheet:SI1070X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SC-89-6
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	99mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Power Dissipation	236mW
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	99mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	1.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	385pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 5V
Rise Time	22ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	1.2A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Input Capacitance	385pF
Drain to Source Resistance	99mOhm
Rds On Max	99 mΩ
RoHS Status	ROHS3 Compliant