SI7454CDP-T1-GE3

new-10%

Manufacturer part number:SI7454CDP-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 100V 8.1A 8-Pin PowerPAK SO T/R

Case Package:SOT-23

Datasheet:SI7454CDP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4.1W Ta 29.7W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.1W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 50V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0305Ohm
Pulsed Drain Current-Max (IDM)	40A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant