SI1405DL-T1-GE3

new-10%

Manufacturer part number:SI1405DL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 8V 1.6A SC-70-6

Case Package:SOT-23

Datasheet:SI1405DL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	568mW Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	8 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	125m Ω @ 1.8A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	7nC @ 4.5V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	1.6A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.125Ohm
DS Breakdown Voltage-Min	8V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant