SI1410EDH-T1-E3

new-10%

Manufacturer part number:SI1410EDH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 2.9A SC70-6

Case Package:SOT-23

Datasheet:SI1410EDH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	70mOhm
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	150 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	2.9A Ta
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Rise Time	400ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	400 ns
Turn-Off Delay Time	1.9 μs
Continuous Drain Current (ID)	3.7A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2.9A
Drain to Source Breakdown Voltage	20V
Nominal Vgs	450 mV
Height	900μm
Length	2.05mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free