SIA850DJ-T1-GE3

new-10%

Manufacturer part number:SIA850DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 190V 0.95A 7.0W

Case Package:SOT-23

Datasheet:SIA850DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	LITTLE FOOT®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.9W Ta 7W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	7W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8 Ω @ 360mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 100V
Current - Continuous Drain (Id) @ 25°C	950mA Tc
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±16V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	950mA
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	0.95A
Drain to Source Breakdown Voltage	190V
FET Feature	Schottky Diode (Isolated)
Radiation Hardening	No
RoHS Status	ROHS3 Compliant