SI4688DY-T1-GE3

new-10%

Manufacturer part number:SI4688DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 8.9A 8-SOIC

Case Package:SOT-23

Datasheet:SI4688DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	186.993455mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.4W Ta
Element Configuration	Single
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1580pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8.9A Ta
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.58nF
Drain to Source Resistance	11mOhm
Rds On Max	11 mΩ
Height	1.55mm
Length	5mm
Width	4mm
RoHS Status	ROHS3 Compliant