SI1413EDH-T1-E3

new-10%

Manufacturer part number:SI1413EDH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2.3A SC70-6

Case Package:SOT-23

Datasheet:SI1413EDH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	115mOhm
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	750 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	115m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 100μA (Min)
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Rise Time	1.6μs
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	1.6 μs
Turn-Off Delay Time	3.9 μs
Continuous Drain Current (ID)	-2.9A
Threshold Voltage	-450mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2.3A
Drain to Source Breakdown Voltage	20V
Nominal Vgs	-450 mV
Height	990.6μm
Length	2.1844mm
Width	1.3462mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free