IXFV52N30P

new-10%

Manufacturer part number:IXFV52N30P

Manufacturer:IXYS

Description:MOSFET N-CH 300V 52A PLUS220

Case Package:SOT-23

Datasheet:IXFV52N30P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3, Short Tab
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	PolarHT™ HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	66MOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	400W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	66m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	3490pF @ 25V
Current - Continuous Drain (Id) @ 25°C	52A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	52A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	150A
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free