SI1414DH-T1-GE3

new-10%

Manufacturer part number:SI1414DH-T1-GE3

Manufacturer:Vishay Siliconix

Description:Single N-Channel 30 V 0.046 O 5.7 nC Power Mosfet - SOT-363 (SC-70-6)

Case Package:SOT-23

Datasheet:SI1414DH-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	46mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.56W
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	46m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free