SI1488DH-T1-GE3

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Manufacturer part number:SI1488DH-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 6.1A SC70-6

Case Package:SOT-23

Datasheet:SI1488DH-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.5W Ta 2.8W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	8.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6.1A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	45ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	82 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	6.1A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.049Ohm
Pulsed Drain Current-Max (IDM)	20A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	5 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant