SI2302CDS-T1-E3

new-10%

Manufacturer part number:SI2302CDS-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 2.6A SOT-23

Case Package:SOT-23

Datasheet:SI2302CDS-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	57mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	710mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	710mW
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	57m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 4.5V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	2.6A
Threshold Voltage	400mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Input Capacitance	112pF
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free