SIHG24N65E-E3

new-10%

Manufacturer part number:SIHG24N65E-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 650V 24A TO247AC

Case Package:SOT-23

Datasheet:SIHG24N65E-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Supplier Device Package	TO-247AC
Weight	38.000013g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	145mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Power Dissipation	250W
Turn On Delay Time	24 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2740pF @ 100V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Rise Time	84ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	69 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	24A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	2.74nF
Drain to Source Resistance	145mOhm
Rds On Max	145 mΩ
Height	20.7mm
Length	15.87mm
Width	5.31mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free