SI2308BDS-T1-GE3

new-10%

Manufacturer part number:SI2308BDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V

Case Package:SOT-23

Datasheet:SI2308BDS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Silver (Ag)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.09W Ta 1.66W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.09W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	156m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 30V
Current - Continuous Drain (Id) @ 25°C	2.3A Tc
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	2.3A
Drain Current-Max (Abs) (ID)	1.9A
Drain-source On Resistance-Max	0.156Ohm
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant