SIHB15N65E-GE3

new-10%

Manufacturer part number:SIHB15N65E-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) D2PAK

Case Package:SOT-23

Datasheet:SIHB15N65E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	34W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	34W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	280m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1640pF @ 100V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Rise Time	24ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	4V
Drain-source On Resistance-Max	0.28Ohm
Pulsed Drain Current-Max (IDM)	38A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	286 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free