SI2308DS-T1-E3

new-10%

Manufacturer part number:SI2308DS-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 2A SOT23-3

Case Package:SOT-23

Datasheet:SI2308DS-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3 (TO-236)
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	160mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.25W Ta
Element Configuration	Single
Power Dissipation	1.25W
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	160mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	240pF
Drain to Source Resistance	160mOhm
Rds On Max	160 mΩ
Height	1.02mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free