SI3424DV-T1-E3

new-10%

Manufacturer part number:SI3424DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 5A 6-TSOP

Case Package:SOT-23

Datasheet:SI3424DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Packaging	Cut Tape (CT)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	28mOhm
Terminal Finish	MATTE TIN
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Max Power Dissipation	1.14W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.14W
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	28m Ω @ 6.7A, 10V
Vgs(th) (Max) @ Id	800mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	10ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	30V
Nominal Vgs	800 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free