SI3424DV-T1-GE3

new-10%

Manufacturer part number:SI3424DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 6.7A 2.0W 28mohm @ 10V

Case Package:SOT-23

Datasheet:SI3424DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.14W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.14W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	28m Ω @ 6.7A, 10V
Vgs(th) (Max) @ Id	800mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5A
Drain-source On Resistance-Max	0.028Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant