IRF8113GTRPBF

new-10%

Manufacturer part number:IRF8113GTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 17.2A 8-SOIC

Case Package:SOT-23

Datasheet:IRF8113GTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2910pF @ 15V
Current - Continuous Drain (Id) @ 25°C	17.2A Ta
Gate Charge (Qg) (Max) @ Vgs	36nC @ 4.5V
Rise Time	8.9ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	17.2A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	2.91nF
Drain to Source Resistance	5.6mOhm
Rds On Max	5.6 mΩ
Nominal Vgs	2.2 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant