SI3433BDV-T1-GE3

new-10%

Manufacturer part number:SI3433BDV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 5.6A 2.0W 42mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI3433BDV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	42m Ω @ 5.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.3A Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Rise Time	45ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	-4.3A
Threshold Voltage	-450mV
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.042Ohm
Drain to Source Breakdown Voltage	-20V
Nominal Vgs	-450 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant