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SI3445ADV-T1-GE3

SI3445ADV-T1-GE3

SI3445ADV-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 4.4A 6-TSOP

SOT-23

SI3445ADV-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 42m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.4A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 4.4A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage -8V
RoHS Status ROHS3 Compliant

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