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FDMS86101E

FDMS86101E

FDMS86101E

ON Semiconductor

FET 100V 8.0 MOHM PQFN56

SOT-23

FDMS86101E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 104W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12.4A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V

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