TK40P03M1(T6RDS-Q)

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Manufacturer part number:TK40P03M1(T6RDS-Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 30V 40A DPAK-3

Case Package:SOT-23

Datasheet:TK40P03M1(T6RDS-Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	DPAK
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSVI-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	33W
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 10V
Current - Continuous Drain (Id) @ 25°C	40A Ta
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.15nF
Rds On Max	10.8 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant