SI3451DV-T1-E3

new-10%

Manufacturer part number:SI3451DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2.8A 6-TSOP

Case Package:SOT-23

Datasheet:SI3451DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.25W Ta 2.1W Tc
Element Configuration	Single
Power Dissipation	1.25W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	115mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 5V
Rise Time	30ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	-2.8A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Input Capacitance	250pF
Drain to Source Resistance	115mOhm
Rds On Max	115 mΩ
RoHS Status	ROHS3 Compliant