SI8435DB-T1-E1

new-10%

Manufacturer part number:SI8435DB-T1-E1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 10A 2X2 4-MFP

Case Package:SOT-23

Datasheet:SI8435DB-T1-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Supplier Device Package	4-Microfoot
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.78W Ta 6.25W Tc
Turn On Delay Time	15 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	41mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 5V
Rise Time	29ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	91 ns
Turn-Off Delay Time	230 ns
Continuous Drain Current (ID)	-10A
Gate to Source Voltage (Vgs)	5V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	1.6nF
Drain to Source Resistance	41mOhm
Rds On Max	41 mΩ
RoHS Status	ROHS3 Compliant