SI3451DV-T1-GE3

new-10%

Manufacturer part number:SI3451DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2.8A 6-TSOP

Case Package:SOT-23

Datasheet:SI3451DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.25W Ta 2.1W Tc
Element Configuration	Single
Power Dissipation	1.25W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	115mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	2.8A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Input Capacitance	250pF
Drain to Source Resistance	115mOhm
Rds On Max	115 mΩ
RoHS Status	ROHS3 Compliant