SI5406DC-T1-GE3

new-10%

Manufacturer part number:SI5406DC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 12V 6.9A 1206-8

Case Package:SOT-23

Datasheet:SI5406DC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Weight	84.99187mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	20mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	20mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 1.2mA (Min)
Current - Continuous Drain (Id) @ 25°C	6.9A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	46ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	9.5A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Resistance	20mOhm
Rds On Max	20 mΩ
Height	1.1mm
Length	3.05mm
Width	1.65mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant