SI3454CDV-T1-E3

new-10%

Manufacturer part number:SI3454CDV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 4.2A 6TSOP

Case Package:SOT-23

Datasheet:SI3454CDV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.25W Ta 1.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	305pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.2A Tc
Gate Charge (Qg) (Max) @ Vgs	10.6nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	3.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.2A
Drain-source On Resistance-Max	0.05Ohm
DS Breakdown Voltage-Min	30V
Height	1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant