SI3467DV-T1-E3

new-10%

Manufacturer part number:SI3467DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 3.8A 6-TSOP

Case Package:SOT-23

Datasheet:SI3467DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.14W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	54m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	-5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3.8A
Drain-source On Resistance-Max	0.054Ohm
Height	1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant