SI3475DV-T1-GE3

new-10%

Manufacturer part number:SI3475DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET P-CH 200V 0.75A 6-Pin TSOP T/R

Case Package:SOT-23

Datasheet:SI3475DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Packaging	Cut Tape (CT)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1.61Ohm
Terminal Finish	PURE MATTE TIN
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	Other Transistors
Max Power Dissipation	3.2W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	2
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	1.61 Ω @ 900mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 50V
Current - Continuous Drain (Id) @ 25°C	950mA Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	29ns
Fall Time (Typ)	14 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	750mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.95A
Drain to Source Breakdown Voltage	200V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free