Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SI7186DP-T1-E3

SI7186DP-T1-E3

SI7186DP-T1-E3

Vishay Siliconix

MOSFET N-CH 80V 32A PPAK SO-8

SOT-23

SI7186DP-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Resistance 12.5MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Power Dissipation-Max 5.2W Ta 64W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation5.2W
Case Connection DRAIN
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 40V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 14.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 32A
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 60A
Dual Supply Voltage 80V
Avalanche Energy Rating (Eas) 45 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4388 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.560746$1.560746
10$1.472402$14.72402
100$1.389059$138.9059
500$1.310433$655.2165
1000$1.236257$1236.257

About SI7186DP-T1-E3

The SI7186DP-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 80V 32A PPAK SO-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7186DP-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News