SI3499DV-T1-E3

new-10%

Manufacturer part number:SI3499DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 8V 5.3A 6-TSOP

Case Package:SOT-23

Datasheet:SI3499DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Weight	19.986414mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Power Dissipation	1.1W
Turn On Delay Time	27 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	750mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	5.3A Ta
Gate Charge (Qg) (Max) @ Vgs	42nC @ 4.5V
Rise Time	65ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	210 ns
Continuous Drain Current (ID)	-7A
Gate to Source Voltage (Vgs)	5V
Drain to Source Breakdown Voltage	-8V
Drain to Source Resistance	23mOhm
Rds On Max	23 mΩ
Height	1mm
Length	3.05mm
Width	1.65mm
RoHS Status	ROHS3 Compliant