SI3552DV-T1-E3

new-10%

Manufacturer part number:SI3552DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 30V 6TSOP

Case Package:SOT-23

Datasheet:SI3552DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Weight	19.986414mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	200mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.15W
Base Part Number	SI3552
Number of Elements	2
Number of Channels	2
Element Configuration	Single
Power Dissipation	1.15W
Turn On Delay Time	8 ns
Power - Max	1.15W
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	2.5A
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	51A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Feature	Logic Level Gate
Drain to Source Resistance	85mOhm
Rds On Max	105 mΩ
Nominal Vgs	1 V
Height	1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant