SI3879DV-T1-E3

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Manufacturer part number:SI3879DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 5A 6-TSOP

Case Package:SOT-23

Datasheet:SI3879DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2W Ta 3.3W Tc
Element Configuration	Single
Power Dissipation	2W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Rise Time	80ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Input Capacitance	480pF
Drain to Source Resistance	70mOhm
Rds On Max	70 mΩ
RoHS Status	ROHS3 Compliant