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FQPF1P50

FQPF1P50

FQPF1P50

ON Semiconductor

MOSFET P-CH 500V 1.03A TO-220F

SOT-23

FQPF1P50 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -500V
Technology MOSFET (Metal Oxide)
Current Rating -1.5A
Power Dissipation-Max 28W Tc
Element Configuration Single
Power Dissipation 28W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10.5 Ω @ 515mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.03A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 1.03A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -500V
RoHS Status RoHS Compliant
Lead Free Lead Free

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