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SI4101DY-T1-GE3

SI4101DY-T1-GE3

SI4101DY-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 6m Ω @ 15A, 10V ±20V 8190pF @ 15V 203nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

SOT-23

SI4101DY-T1-GE3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 6W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 6W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8190pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25.7A Tc
Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 25.7A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage -30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.38985 $0.7797
5,000 $0.36455 $1.82275
12,500 $0.35190 $4.2228
25,000 $0.34500 $8.625
SI4101DY-T1-GE3 Product Details

SI4101DY-T1-GE3 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 8190pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 25.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -30V, and this device has a drainage-to-source breakdown voltage of -30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI4101DY-T1-GE3 Features


a continuous drain current (ID) of 25.7A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 80 ns
a 30V drain to source voltage (Vdss)


SI4101DY-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI4101DY-T1-GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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