SIB452DK-T1-GE3

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Manufacturer part number:SIB452DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:SIB452DK-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SIB452DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Weight	95.991485mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	2.4Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.4W Ta 13W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	135pF @ 50V
Current - Continuous Drain (Id) @ 25°C	1.5A Tc
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±16V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	1.5A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	190V
Height	750μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
3,000	$0.33900	$1.017
6,000	$0.31700	$1.902
15,000	$0.30600	$4.59
30,000	$0.30000	$9

SIB452DK-T1-GE3 Description

The SIB452DK-T1-GE3 is an N-Channel 190 V (D-S) MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.

SIB452DK-T1-GE3 Features

TrenchFET® power MOSFET
New thermally enhanced PowerPAK® SC-75 package

- Small footprint area

- Low on-resistance

High current: The same tendency as for low ON resistance.
High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).
Withstand voltage: The optimum structure is selected for the target withstand voltage.
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.