SIB452DK-T1-GE3 Description

The SIB452DK-T1-GE3 is an N-Channel 190 V (D-S) MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.

SIB452DK-T1-GE3 Features

• TrenchFET® power MOSFET

• New thermally enhanced PowerPAK® SC-75 package

- Small footprint area

- Low on-resistance

• High current: The same tendency as for low ON resistance.

• High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).

• Withstand voltage: The optimum structure is selected for the target withstand voltage.

• Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.

SIB452DK-T1-GE3 Applications

• Boost converter for portable devices

• Automotive

• Industrial

• Communications systems in particular

• Automotive electronics

• Switching devices in electronic control units

• Power converters in modern electric vehicles