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SI7446BDP-T1-E3

SI7446BDP-T1-E3

SI7446BDP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

SOT-23

SI7446BDP-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Power Dissipation 1.9W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3076pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Rise Time 16ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 3.076nF
Drain to Source Resistance 7.5mOhm
Rds On Max 7.5 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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