SI4158DY-T1-GE3

new-10%

Manufacturer part number:SI4158DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 36.5A 8-SOIC

Case Package:SOT-23

Datasheet:SI4158DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	3W Ta 6W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Turn On Delay Time	37 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5710pF @ 10V
Current - Continuous Drain (Id) @ 25°C	36.5A Tc
Gate Charge (Qg) (Max) @ Vgs	132nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	25.8A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.0026Ohm
Drain to Source Breakdown Voltage	20V
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant