STB18NM60N

new-10%

Manufacturer part number:STB18NM60N

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 13A D2PAK

Case Package:SOT-23

Datasheet:STB18NM60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	285mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Base Part Number	STB18N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	110W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	80W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	285m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 50V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	13A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Pulsed Drain Current-Max (IDM)	52A
DS Breakdown Voltage-Min	600V
Nominal Vgs	3 V
Height	4.6mm
Length	10.75mm
Width	10.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free